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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
FS3UM-10
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
q
VDSS ................................................................................ 500V rDS (ON) (MAX) ................................................................. 4.4 ID ............................................................................................ 3A
TO-220
APPLICATION SMPS, DC-DC Converter, Battery charger, Power supply of Printer, Copier, TV, VCR, Personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 500 30 3 9 60 -55 ~ +150 -55 ~ +150 2.0
Unit V V A A W C C g Sep. 2001
Typical value
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 30 -- -- 2 -- -- 1.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 3.4 3.4 1.5 300 35 6 13 10 30 30 1.5 -- Max. -- -- 10 1 4 4.4 4.4 -- -- -- -- -- -- -- -- 2.0 2.08
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 TC = 25C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5 TC = 25C Pulse Test VGS = 20V 10V 8V 6V PD = 60W tw=10s
80
DRAIN CURRENT ID (A)
100s 1ms 10ms DC
60
40
20
0
0
50
100
150
200
10-2
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 10 PD = 60W TC = 25C Pulse Test
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
8 VGS = 20V 10V 8V
4
6
3
4
6V 5V
2 5V
2
1
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC = 25C Pulse Test 8
TC = 25C Pulse Test 32
VGS = 10V
24 ID = 4A 16 3A 2A 1A 0 0 4 8 12 16 20
6 20V 4
8
2 0 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
8
6
3 2 100 7 5 3 2 10-1 -1 10 23
TC = 25C
4
75C 125C
2
0
0
4
8
12
16
20
5 7 100
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 102 7 5 3 2 Coss 5 Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50
3 2 102 7 5 3 2
tf
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
101 7 Tch = 25C Crss 5 f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
td(on)
101 tr 7 5 10-1 2 3
5 7 100
23
5 7 101
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 10 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TC = 125C VGS = 0V Pulse Test 25C 6 75C
GATE-SOURCE VOLTAGE VGS (V)
16
SOURCE CURRENT IS (A)
20
Tch = 25C ID = 3A VDS = 100V 200V 12 400V 8
8
4
4
2
0
0
4
8
12
16
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1A Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10-1 7 5 3 2
0.1
1.0
0.8
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (C)
Sep. 2001

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